Onsemi - FSEZ1216BNY

  1. Home
  2. Onsemi - FSEZ1216BNY
FSEZ1216BNY by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FSEZ1216BNY
Description Small Signal Field-Effect Transistors; Surface Mount: NO; Qualification: Not Qualified; Terminal Finish: MATTE TIN; JEDEC-95 Code: MS-001BA; Terminal Form: THROUGH-HOLE;
Datasheet FSEZ1216BNY Datasheet
In Stock1,182
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
JEDEC-95 Code: MS-001BA
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 8
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T8
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,182 - -

Popular Products

Category Top Products

ZXMP10A13FTA by Zetex Plc

ZXMP10A13FTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BS170 by Motorola

BS170

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin/Lead (Sn/Pb);
2N7000-G by Supertex

2N7000-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;
BSS123NH6327XTSA1 by Infineon Technologies

BSS123NH6327XTSA1

Infineon Technologies

Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
FDN337N_NL by Fairchild Semiconductor

FDN337N_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN337N_NL is a N-CHANNEL FET for SWITCHING applications. It has a 30V DS Breakdown Voltage, 2A Drain Current, and 0.065 ohm On Resistance. With ENHANCEMENT MODE operation, it comes in a SMALL OUTLINE package with GULL WING terminals.
2N7002T by Tak Cheong Electronics Holdings

2N7002T

Tak Cheong Electronics Holdings

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI2308BDS-T1-GE3 by Vishay Intertechnology

SI2308BDS-T1-GE3

Vishay Intertechnology

SI2308BDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 2.3A max drain current, ideal for switching applications. It operates in enhancement mode with a max power dissipation of 1.66W at 150°C, featuring a small outline package style for surface mount assembly.
BSS123 by Supertex

BSS123

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 6 ohm;
2N7002DWQ-7-F by Diodes Incorporated

2N7002DWQ-7-F

Diodes Incorporated

Diodes Incorporated 2N7002DWQ-7-F is a N-channel FET with 60V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package. Operating in enhancement mode, it has 7.5 ohm max drain-source resistance and peak reflow temp of 260°C.
AO3407A by Alpha & Omega Semiconductor

AO3407A

Alpha & Omega Semiconductor

AO3407A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package, operating at up to 150°C.
SQ2309ES-T1_GE3 by Vishay Intertechnology

SQ2309ES-T1_GE3

Vishay Intertechnology

The Vishay Intertechnology SQ2309ES-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 1.7A max drain current. Ideal for applications requiring small outline, it operates in enhancement mode with 0.335 ohm RDS(on) and features built-in diode in a gull wing package.
2N7002 by Samsung

2N7002

Samsung

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
FDN340P by Onsemi

FDN340P

Onsemi

FDN340P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The package is a SMALL OUTLINE with GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
FDC6327C by Fairchild Semiconductor

FDC6327C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; JESD-30 Code: R-PDSO-G6; Maximum Drain Current (ID): 2.7 A;
SI4909DY-T1-GE3 by Vishay Siliconix

SI4909DY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8 A; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .027 ohm;
2N7002K-T1-GE3 by Vishay Intertechnology

2N7002K-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's 2N7002K-T1-GE3 is a N-channel FET with 60V breakdown voltage, ideal for switching applications. It features single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.3A and on-resistance of 4 ohm, it offers reliable performance in small outline packages.
2N7002DW-7-F by Diodes Incorporated

2N7002DW-7-F

Diodes Incorporated

2N7002DW-7-F by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A drain current, and 7.5 ohm on-resistance. Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C temperature.
BSS138TA by Zetex Plc

BSS138TA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain Current (Abs) (ID): .2 A;
SI2328DS-T1-E3 by Vishay Intertechnology

SI2328DS-T1-E3

Vishay Intertechnology

SI2328DS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1.15A Drain Current, and 0.25 ohm On Resistance. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation, GULL WING terminals, and compact SMALL OUTLINE package style.
2N7002KW by Yangzhou Yangjie Electronics

2N7002KW

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 2.5 ohm; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;