Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FW356-TL-E |
| Description | N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | FW356-TL-E Datasheet |
| In Stock | 2,365 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
ONSONSFW356-TL-E 2156-FW356-TL-E |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 5 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Bismuth (Sn/Bi) |
| JESD-609 Code: | e6 |
| Maximum Power Dissipation (Abs): | 2.3 W |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 5 A |
| Moisture Sensitivity Level (MSL): | 1 |









