Onsemi - FW356

FW356 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FW356
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Elements: 2; Package Shape: RECTANGULAR;
Datasheet FW356 Datasheet
In Stock1,446
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 14 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 2.3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 5 A
Maximum Drain-Source On Resistance: .084 ohm
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Pricing (USD)

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