H11N2SVM by Onsemi | Optoelectronics

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Manufacturer	Onsemi
Manufacturer's Part Number	H11N2SVM
Description	LOGIC IC OUTPUT OPTOCOUPLER; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin (Sn); Nominal Supply Voltage: 15 V; Additional Features: OPEN COLLECTOR, UL RECOGNIZED, VDE APPROVED; Configuration: SINGLE;
Datasheet	H11N2SVM Datasheet
In Stock	1,628

NAME	DESCRIPTION
Minimum Supply Voltage:	4 V
Nominal Supply Voltage:	15 V
Configuration:	SINGLE
Sub-Category:	Optocoupler - IC Outputs
Terminal Finish:	Tin (Sn)
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Isolation Voltage:	7500 V
Mounting Feature:	SURFACE MOUNT
Maximum On State Current:	.05 A
No. of Functions:	1
Optoelectronic Type:	LOGIC IC OUTPUT OPTOCOUPLER
Nominal Response Time:	150 ns
Maximum Forward Current:	.03 A
No. of Elements:	1
Maximum Power Dissipation:	.15 W
Nominal Hysteresis Ratio:	.65
Additional Features:	OPEN COLLECTOR, UL RECOGNIZED, VDE APPROVED
Maximum Operating Temperature:	85 Cel
Nominal Data Rate:	5 MBps

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,628	-	-

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;

The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;