Onsemi - HUF76139S3S

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HUF76139S3S by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number HUF76139S3S
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; No. of Terminals: 2; Operating Mode: ENHANCEMENT MODE;
Datasheet HUF76139S3S Datasheet
In Stock2,045
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 120 ns
Maximum Drain Current (ID): 75 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 165 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 218 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0075 ohm
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 75 A
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