Onsemi - K918

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K918 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number K918
Description Small Signal Bipolar Transistors;
Datasheet K918 Datasheet
In Stock900
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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2907A by Hi-tron Semiconductor

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC847CDW1T1G by Onsemi

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BC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, hFE of 420. It operates up to 150°C, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and high transition frequency of 100MHz.
SMMBT2907ALT1G by Onsemi

SMMBT2907ALT1G

Onsemi

SMMBT2907ALT1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 60V. Ideal for small outline applications requiring high DC current gain (hFE) of 100 and operating temperature up to 150°C. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance and peak reflow temp of 260°C.
2N2219A by Nte Electronics

2N2219A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2222AUA by Silicon Transistor

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B,215 by Nexperia

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Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC817-40 by Philips Components

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Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
SMMBTA92LT1G by Onsemi

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Onsemi

SMMBTA92LT1G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high hFE of 25. Its compact package and surface mount capability make it suitable for space-constrained designs.
BC847C by Continental Device India

BC847C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC847B,235 by Nexperia

BC847B,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
BC847CW,115 by Nexperia

BC847CW,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
MMBT3906 by Microsemi

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Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
KSP13TA by Onsemi

KSP13TA

Onsemi

KSP13TA by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 125MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.
BC807-25LT1G by Onsemi

BC807-25LT1G

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BC807-25LT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.7V, hFE of 160, and IC of 0.5A. Ideal for switching applications, it operates b/w -55 to 150 °C and has a max VCE of 45V. With a small outline package style and surface mount capability, it offers high performance in compact designs.
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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Reference Standard: MIL-19500/255;
2N2905A by General Diode

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General Diode

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-25W,115 by NXP Semiconductors

BC817-25W,115

NXP Semiconductors

NXP Semiconductors' BC817-25W,115 is a NPN BJT transistor with VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. With a compact small outline package, it features GULL WING terminals for surface mount assembly.
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2N2905A

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;