Onsemi - KSB772G

MMBT3904WT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for amplifier applications, it has a small outline package and operates b/w -55°C to 150°C. With a DC current gain of at least 30, this transistor offers fast switching times for efficient performance.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BC817-25LT3G by Onsemi is a NPN BJT transistor with 160 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its 0.5A IC and 0.3W Ptot capabilities. Its GULL WING terminals and SOT package make it suitable for surface mount PCB designs.

BC857BE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and IC of 0.1A. It is used for switching applications in surface mount designs due to its high transition frequency of 250MHz. The package style is small outline with Gull Wing terminals, suitable for compact electronic devices.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

The Onsemi SBC846BWT1G is a NPN BJT with max power dissipation of 0.15W, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its single configuration, surface mount capability, and max collector current of 0.1A.

NXP Semiconductors' BC817-25W,115 is a NPN BJT transistor with VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. With a compact small outline package, it features GULL WING terminals for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;

ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.

BC817.40 by Central Semiconductor is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.5A. It has a min DC current gain of 250 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance, such as amplifiers and switching circuits.