L272M by Onsemi | Amplifiers

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Manufacturer	Onsemi
Manufacturer's Part Number	L272M
Description	OPERATIONAL AMPLIFIER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Datasheet	L272M Datasheet
In Stock	363

NAME	DESCRIPTION
Package Body Material:	Plastic/Epoxy
Low-Bias:	No
Maximum Seated Height:	0.2 in (5.08 mm)
Frequency Compensation:	Yes
Maximum Supply Voltage Limit:	20 V
Maximum Bias Current (IIB) @25C:	2.5 uA
Sub-Category:	Operational Amplifiers
Maximum Supply Current:	12 mA
Surface Mount:	No
Terminal Finish:	Tin
No. of Terminals:	8
Maximum Input Offset Voltage:	60000 uV
Nominal Unity Gain Bandwidth:	350 kHz
Terminal Position:	Dual
Package Style (Meter):	In Line
Technology:	BIPOLAR
JESD-30 Code:	R-PDIP-T8
Low-Offset:	No
Minimum Voltage Gain:	1780
Package Shape:	Rectangular
Terminal Form:	Through-Hole
Maximum Operating Temperature:	85 °C (185 °F)
Package Code:	DIP
Amplifier Type:	Operational Amplifier
Nominal Slow Rate:	1 V/us
Width:	0.3 in (7.62 mm)
Architecture:	Voltage Feedback
Nominal Common Mode Reject Ratio:	75 dB
Packing Method:	Tube
Micropower:	No
Nominal Negative Supply Voltage (Vsup):	-12 V
JESD-609 Code:	e3
Minimum Operating Temperature:	-25 °C (-13 °F)
Maximum Average Bias Current (IIB):	2.5 uA
No. of Functions:	2
Qualification:	No
Package Equivalence Code:	DIP8,.3
Length:	0.362 in (9.2 mm)
Nominal Supply Voltage / Vsup (V):	12 V
Maximum Negative Supply Voltage Limit:	-20 V
Terminal Pitch:	0.1 in (2.54 mm)
Power:	Yes
Temperature Grade:	Other
Wideband:	No
Power Supplies (V):	±12 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
363	-	-

Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;