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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | MBD110DWT1G |
| Description | RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | MBD110DWT1G Datasheet |
| In Stock | 1,279 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Maximum Forward Voltage (VF): | .6 V |
| Config: | SEPARATE, 2 ELEMENTS |
| Diode Type: | RECTIFIER DIODE |
| Maximum Output Current: | .2 A |
| Sub-Category: | Rectifier Diodes |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| Maximum Reverse Current: | .25 uA |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Technology: | SCHOTTKY |
| JESD-30 Code: | R-PDSO-G6 |
| Minimum Breakdown Voltage: | 7 V |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 125 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| No. of Phases: | 1 |
| Reverse Test Voltage: | 3 V |
| Maximum Repetitive Peak Reverse Voltage: | 7 V |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | .12 W |
| Peak Reflow Temperature (C): | 260 |
| Application: | EFFICIENCY |
