Onsemi - MCH3383-TL-H

MCH3383-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MCH3383-TL-H
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Terminal Position: DUAL; No. of Elements: 1;
Datasheet MCH3383-TL-H Datasheet
In Stock2,010
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .069 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e6
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Maximum Drain Current (Abs) (ID): 3.5 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,010 $0.184 $369.840

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