
Image shown is a representation only.
Manufacturer | Onsemi |
---|---|
Manufacturer's Part Number | MCH3486-TL-W |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 2 A; |
Datasheet | MCH3486-TL-W Datasheet |
In Stock | 1,538 |
NAME | DESCRIPTION |
---|---|
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 2 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN BISMUTH |
JESD-609 Code: | e6 |
Maximum Power Dissipation (Abs): | 1 W |
No. of Elements: | 1 |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 2 A |
Peak Reflow Temperature (C): | 260 |
Moisture Sensitivity Level (MSL): | 1 |