Onsemi - MCH6321-TL-W

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MCH6321-TL-W by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MCH6321-TL-W
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 16 A;
Datasheet MCH6321-TL-W Datasheet
In Stock55
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4 A
Maximum Pulsed Drain Current (IDM): 16 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .083 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 20 V
Maximum Drain Current (Abs) (ID): 4 A
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Pricing (USD)

Qty. Unit Price Ext. Price
55 $0.119 $6.545

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