Onsemi - MCH6545

  1. Home
  2. Onsemi - MCH6545
MCH6545 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MCH6545
Description NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 300;
Datasheet MCH6545 Datasheet
In Stock2,006
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .55 W
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 300
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,006 - -

Popular Products

Category Top Products

2N2907A by Good-ark Electronics

2N2907A

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC846BDW1T1G by Onsemi

BC846BDW1T1G

Onsemi

BC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, DC current gain of 200, and operates up to 150°C. This small outline transistor in gull wing package offers high performance in compact designs.
BC547B by STMicroelectronics

BC547B

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
ULN2803AFWG(C,ELHA) by Toshiba

ULN2803AFWG(C,ELHA)

Toshiba

Toshiba's ULN2803AFWG(C,ELHA) is an NPN BJT with 8 elements and 18 terminals. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications in small outline packages with Gull Wing terminals.
MMBT3906 by Comchip Technology

MMBT3906

Comchip Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
MMBT2907A by Electronic Devices

MMBT2907A

Electronic Devices

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
SBC817-25LT1G by Good-ark Electronics

SBC817-25LT1G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC547-B by Infineon Technologies

BC547-B

Infineon Technologies

BC547-B by Infineon Technologies is a NPN BJT transistor with a min hFE of 200, ideal for switching applications. It has a max IC of 0.1A and can operate at temperatures up to 150°C. The transistor comes in a cylindrical package with through-hole terminals, making it suitable for various electronic circuits.
BC847B,215 by Nexperia

BC847B,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2907A by Crimson Semiconductor

2N2907A

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3904BU by Onsemi

2N3904BU

Onsemi

The Onsemi 2N3904BU is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Its through-hole package makes it suitable for various electronic circuits.
JANTX2N2222A by Optek Technology

JANTX2N2222A

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC81740 by Zetex Plc

BC81740

Zetex Plc

BC81740 by Zetex Plc is a NPN BJT transistor with hFE of 250, VCE of 45V, and IC of 0.5A. Ideal for small signal applications in electronics due to its high transition frequency of 200MHz and compact small outline package. Suitable for surface mount designs requiring low power dissipation and high reliability.
BC846B-7-F by Diodes Incorporated

BC846B-7-F

Diodes Incorporated

Diodes Inc. BC846B-7-F is a NPN BJT transistor with hFE of 200, VCE of 65V, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates b/w -65 to 150°C, meeting AEC-Q101 standards for automotive use.
2N2905A by Electronic Transistors

2N2905A

Electronic Transistors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC847-B by Samsung

BC847-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
BC817-25 by General Semiconductor

BC817-25

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC847C by Formosa Microsemi

BC847C

Formosa Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
BC846B by Kodenshi Auk

BC846B

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
MMBT3904 by Good-ark Electronics

MMBT3904

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;