Onsemi - MCH6662-TL-H

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MCH6662-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MCH6662-TL-H
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Tin/Bismuth (Sn/Bi); Maximum Drain Current (Abs) (ID): 2 A;
Datasheet MCH6662-TL-H Datasheet
In Stock1,725
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .8 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2 A
Maximum Drain Current (Abs) (ID): 2 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
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