Onsemi - MCH6663-TL-H

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MCH6663-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MCH6663-TL-H
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; JESD-609 Code: e6; No. of Terminals: 6;
Datasheet MCH6663-TL-H Datasheet
In Stock1,289
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.8 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): .8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 1.8 A
Maximum Drain-Source On Resistance: .188 ohm
Moisture Sensitivity Level (MSL): 1
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