Onsemi - MCH6937

  1. Home
  2. Onsemi - MCH6937
MCH6937 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MCH6937
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .3 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 200;
Datasheet MCH6937 Datasheet
In Stock1,743
NAME DESCRIPTION
Maximum Collector Current (IC): .3 A
Maximum Power Dissipation (Abs): .5 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,743 - -

Popular Products

Category Top Products

D44H11 by Intersil

D44H11

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
IRF640 by Inchange Semiconductor

IRF640

Inchange Semiconductor

Other Transistors;
BD243C by Boca Semiconductor

BD243C

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Minimum DC Current Gain (hFE): 30;
BC817-16 by Weitron Technology

BC817-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N3904 by Sprague Electric

2N3904

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC857C by Jiangsu Changjiang Electronics Technology

BC857C

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MJD31CT4 by Jiangsu Changjiang Electronics Technology

MJD31CT4

Jiangsu Changjiang Electronics Technology

Other Transistors;
FDN360P-NBGT003B by Fairchild Semiconductor

FDN360P-NBGT003B

Fairchild Semiconductor

FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.
BD139 by National Semiconductor

BD139

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N4401 by Secos

2N4401

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BC817-16 by North American Philips Discrete Products Div

BC817-16

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100;
MPSA42 by Philips Semiconductors

MPSA42

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
TIP127 by Unisonic Technologies

TIP127

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Minimum DC Current Gain (hFE): 1000; No. of Elements: 1;
BC846B by Shanghai Lunsure Electronic Technology

BC846B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC847B by Jiangsu Changjiang Electronics Technology

BC847B

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP117 by Mospec Semiconductor

TIP117

Mospec Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BC547B by Jiangsu Changjiang Electronics Technology

BC547B

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Unisonic Technologies

BC817-25

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;
TIP115 by National Semiconductor

TIP115

National Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BD139-16 by Comset Semiconductors

BD139-16

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;