Onsemi - MICRORB-SMA-10010-GEVB-PK

  1. Home
  2. Onsemi - MICRORB-SMA-10010-GEVB-PK
MICRORB-SMA-10010-GEVB-PK by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MICRORB-SMA-10010-GEVB-PK
Description Photo Diodes;
Datasheet MICRORB-SMA-10010-GEVB-PK Datasheet
In Stock1,464
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,464 - -

Popular Products

Category Top Products

NDL5102C by Renesas Electronics

NDL5102C

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .0000000008 s; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 45 V;
SFH229FA by Siemens

SFH229FA

Siemens

PIN PHOTODIODE; Nominal Light Current: .0108 mA; Configuration: SINGLE; Size: 3 mm; No. of Functions: 1; Infrared (IR) Range: YES;
SFH2910FA by Infineon Technologies

SFH2910FA

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 7 V; Infrared (IR) Range: YES; Maximum Response Time: .0000000015 s;
KOM2057L by Infineon Technologies

KOM2057L

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000000014 s; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0;
BPX-65 by Osi Optoelectronics

BPX-65

Osi Optoelectronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN OVER NICKEL; Maximum Reverse Voltage: 50 V; Size: 4.7 mm; Peak Wavelength (nm): 850;
BPY12H1 by Infineon Technologies

BPY12H1

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000002 s; Maximum Dark Current: 100 nA;
VBPW34FAS by Vishay Intertechnology

VBPW34FAS

Vishay Intertechnology

PIN PHOTODIODE; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
MICROFC-30050-SMT-TR by Onsemi

MICROFC-30050-SMT-TR

Onsemi

MICROFC-30050-SMT-TR by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 914nA. Ideal for optoelectronic applications requiring surface mount configuration.
SFH263P by Infineon Technologies

SFH263P

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: .02 nA; Maximum Response Time: .0000013 s; Semiconductor Material: Silicon;
NDL5406C by Renesas Electronics

NDL5406C

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000000004 s; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 7 nA;
SFH248F by Infineon Technologies

SFH248F

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000005 s; Maximum Reverse Voltage: 10 V; Maximum Operating Temperature: 80 Cel;
BPW50C by Diodes Incorporated

BPW50C

Diodes Incorporated

PIN PHOTODIODE; Terminal Finish: TIN LEAD; Configuration: SINGLE; Additional Features: DAYLIGHT FILTER; Nominal Light Current: .035 mA; Maximum Dark Current: 20 nA;
PC10-2-TO5 by First Sensor Ag

PC10-2-TO5

First Sensor Ag

Photo Diodes;
KOM2085 by Infineon Technologies

KOM2085

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 920; Nominal Light Current: .17 mA; Infrared (IR) Range: YES;
BPX90F by Infineon Technologies

BPX90F

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 200 nA; Semiconductor Material: Silicon; Maximum Response Time: .0000013 s;
NDL5171P2C by Renesas Electronics

NDL5171P2C

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Reverse Voltage: 48 V; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium;
2650A by Lsi

2650A

Lsi

Photo Diodes; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
SFH235FA by Siemens

SFH235FA

Siemens

PIN PHOTODIODE; Shape: RECTANGULAR; Maximum Dark Current: 30 nA; Configuration: SINGLE; Peak Wavelength (nm): 870; Nominal Light Current: .04 mA;
BPW41N by Temic Semiconductors

BPW41N

Temic Semiconductors

PIN PHOTODIODE; Size: 2.73 mm; Shape: SQUARE; Minimum Reverse Breakdown Voltage: 60 V; Nominal Light Current: .038 mA; No. of Functions: 1;
BPW34FASR18R by Osram Opto Semiconductors

BPW34FASR18R

Osram Opto Semiconductors

BPW34FASR18R by Osram Opto Semiconductors is a single PIN photodiode with peak wavelength of 880nm. It has a min reverse breakdown voltage of 16V and operates b/w -40°C to 100°C. Ideal for applications requiring infrared detection, it features a square shape and size of 2.65mm, with nominal light current of 0.023mA and max dark current of 30nA.