Onsemi - MICRORB-SMA-10020-GEVB-PK

  1. Home
  2. Onsemi - MICRORB-SMA-10020-GEVB-PK
MICRORB-SMA-10020-GEVB-PK by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MICRORB-SMA-10020-GEVB-PK
Description Photo Diodes;
Datasheet MICRORB-SMA-10020-GEVB-PK Datasheet
In Stock926
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
926 - -

Popular Products

Category Top Products

BPX65 by Infineon Technologies

BPX65

Infineon Technologies

Infineon's BPX65 is a 4.8mm PIN photodiode with peak wavelength of 850nm. It operates b/w -40 to 80°C, with max response time of 0.00000003s. Ideal for IR applications, it has a reverse breakdown voltage of 50V and nominal light current of 0.01mA.
MICROFJ-SMTPA-30035-GEVBPK by Onsemi

MICROFJ-SMTPA-30035-GEVBPK

Onsemi

MICROFJ-SMTPA-30035-GEVBPK by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 3000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
SFH229 by Infineon Technologies

SFH229

Infineon Technologies

SFH229 by Infineon Technologies is a PIN photodiode with max operating temp of 100°C and min of -55°C. It has a max dark current of 5000nA, response time of 0.00000001s, and reverse voltage of 20V. Ideal for optoelectronic applications requiring precise light detection in varying temperature conditions.
NDL5103P1 by Renesas Electronics

NDL5103P1

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 300 nA; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 60 Cel; Semiconductor Material: Germanium;
TPS708(F) by Toshiba

TPS708(F)

Toshiba

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Silicon; Maximum Reverse Voltage: 30 V; Maximum Operating Temperature: 125 Cel;
SRD00215C by Infineon Technologies

SRD00215C

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 1 nA; Maximum Response Time: .0000000000003 s;
NDL5171P2C by Renesas Electronics

NDL5171P2C

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Reverse Voltage: 48 V; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium;
MICROFC-10010-SMT by Onsemi

MICROFC-10010-SMT

Onsemi

MICROFC-10010-SMT by Onsemi is a 1mm rectangular avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for optoelectronic applications requiring surface mount configuration.
MICROFJ-60035-TSV by Onsemi

MICROFJ-60035-TSV

Onsemi

AVALANCHE PHOTODIODE;
BPW34S by Osram Opto Semiconductors

BPW34S

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: TIN OVER NICKEL; Maximum Dark Current: 30 nA; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
ASDL-5270-D22 by Broadcom

ASDL-5270-D22

Broadcom

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
MICROFR-10050-MLP-TR by Onsemi

MICROFR-10050-MLP-TR

Onsemi

MICROFR-10050-MLP-TR by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.25V, and max dark current of 146nA. Ideal for surface mount applications in optoelectronics.
BPV10NF by Temic Semiconductors

BPV10NF

Temic Semiconductors

PIN PHOTODIODE; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; No. of Functions: 1; Peak Wavelength (nm): 940; Maximum Dark Current: 5 nA;
SPD2025 by Broadcom

SPD2025

Broadcom

Photo Diodes;
SRD00515H by Infineon Technologies

SRD00515H

Infineon Technologies

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Response Time: .0000000000003 s; Maximum Operating Temperature: 85 Cel; Semiconductor Material: Germanium;
VEMD2020X01 by Vishay Intertechnology

VEMD2020X01

Vishay Intertechnology

Vishay Intertechnology's VEMD2020X01 is a 1.8mm PIN photodiode with peak wavelength of 940nm. It operates b/w -40 to 100°C, has a reverse breakdown voltage of 32V, and max dark current of 10nA. Ideal for IR applications, it features surface mounting and matte tin terminal finish.
ASDL-5880-C31 by Broadcom

ASDL-5880-C31

Broadcom

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
SFH212 by Infineon Technologies

SFH212

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 7 V;
PH320 by Renesas Electronics

PH320

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 10 nA; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .00000012 s;
MTPD1346D-100 by Marktech Optoelectronics

MTPD1346D-100

Marktech Optoelectronics

PIN PHOTODIODE;