MJ11022G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MJ11022G
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 15 A;
Datasheet	MJ11022G Datasheet
In Stock	1,320

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	3 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	15 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	175 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-204AA
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	250 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,320	$5.290	$6,982.800

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