MJB18004D2T4 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MJB18004D2T4
Description	NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 13 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A;
Datasheet	MJB18004D2T4 Datasheet
In Stock	1,500

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	13 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	5 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	18
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	2
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	75 W
Maximum Collector-Emitter Voltage:	450 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Peak Reflow Temperature (C):	235

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,500	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;