Onsemi - MJD210-I

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MJD210-I by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MJD210-I
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 65 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 5 A;
Datasheet MJD210-I Datasheet
In Stock2,470
NAME DESCRIPTION
Nominal Transition Frequency (fT): 65 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 10
No. of Terminals: 3
Maximum Power Dissipation (Abs): 12.5 W
Maximum Collector-Emitter Voltage: 25 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 120 pF
Maximum VCEsat: 1.8 V
Maximum Power Dissipation Ambient: 1.4 W
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