Onsemi - MJD45H11-001G

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MJD45H11-001G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MJD45H11-001G
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 90 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
Datasheet MJD45H11-001G Datasheet
In Stock706
NAME DESCRIPTION
Nominal Transition Frequency (fT): 90 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 40
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 20 W
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
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