Onsemi - MJE5850G

MJE5850G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MJE5850G
Description PNP; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A; Qualification: Not Qualified;
Datasheet MJE5850G Datasheet
In Stock786
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 80 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Other Names: 2832-MJE5850G
ONSMJE5850G
MJE5850GOS
2156-MJE5850G-OS
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 5
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 300 V
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