Onsemi - MJK45H11TWG

  1. Home
  2. Onsemi - MJK45H11TWG
MJK45H11TWG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MJK45H11TWG
Description Small Signal Bipolar Transistors;
Datasheet MJK45H11TWG Datasheet
In Stock1,746
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,746 - -

Popular Products

Category Top Products

MMBT2907A by Secos

MMBT2907A

Secos

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
2N2907AUB by Tt Electronics Plc

2N2907AUB

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Power Dissipation Ambient: .5 W; Package Body Material: UNSPECIFIED;
2N2222A by Zetex Plc

2N2222A

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3904 by Micro Electronics

2N3904

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Fairchild Semiconductor

MMBT2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
BC547BBU by Fairchild Semiconductor

BC547BBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT3906VL by Nexperia

MMBT3906VL

Nexperia

Nexperia's MMBT3906VL is a PNP BJT transistor with hFE of 30, VCEO of 40V, and ton of 70ns. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 250MHz.
2N2222AUB by Microchip Technology

2N2222AUB

Microchip Technology

2N2222AUB by Microchip Technology is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/300ns) and high DC current gain (hFE=30).
2N3904TFR by Rochester Electronics

2N3904TFR

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
2N2219A by Baneasa S A

2N2219A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL; Terminal Form: WIRE;
2N2222A by Central Semiconductor

2N2222A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
BC817-40 by Changzhou Galaxy Century Microelectronics

BC817-40

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 45 V;
2N2905A by General Diode

2N2905A

General Diode

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Samsung

BC817-25

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING;
2N3904TAR by Onsemi

2N3904TAR

Onsemi

2N3904TAR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Package style is cylindrical with through-hole terminals.
BC847C by Promax-johnton

BC847C

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; JESD-609 Code: e0;
BC847C by Unisonic Technologies

BC847C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BC846B by Philips Components

BC846B

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 65 V;
SMBT3904E6327HTSA1 by Infineon Technologies

SMBT3904E6327HTSA1

Infineon Technologies

Infineon's SMBT3904E6327HTSA1 is a NPN BJT transistor with max. power dissipation of 0.33W, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its small outline package style and max. collector-emitter voltage of 40V.
2N3906 by Toshiba

2N3906

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;