MMBD6050LT3G by Onsemi | Diodes

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Manufacturer	Onsemi
Manufacturer's Part Number	MMBD6050LT3G
Description	RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 3; Surface Mount: NO; Package Shape: RECTANGULAR;
Datasheet	MMBD6050LT3G Datasheet
In Stock	646

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Maximum Forward Voltage (VF):	1.1 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	.2 A
Sub-Category:	Rectifier Diodes
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	WIRE
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	70 V
JEDEC-95 Code:	TO-236AB
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Non Repetitive Peak Forward Current:	.5 A
Diode Element Material:	SILICON
Qualification:	Not Qualified
Maximum Power Dissipation:	.225 W
Peak Reflow Temperature (C):	260
Maximum Reverse Recovery Time:	.004 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
646	$0.021	$13.566

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EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;