Onsemi - MMBFJ175LT1G

MMBFJ175LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MMBFJ175LT1G
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Feedback Capacitance (Crss): 5.5 pF; JESD-609 Code: e3;
Datasheet MMBFJ175LT1G Datasheet
In Stock38,146
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: CHOPPER
Maximum Drain Current (ID): .06 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .225 W
Maximum Drain-Source On Resistance: 125 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 5.5 pF
JEDEC-95 Code: TO-236
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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