MMBT2132T3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MMBT2132T3G
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .342 W; Maximum Collector Current (IC): .7 A; Terminal Finish: TIN;
Datasheet	MMBT2132T3G Datasheet
In Stock	976

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.7 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	150
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.342 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
976	$0.076	$74.176

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N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

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