Onsemi - MMBT5401M3T5G

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MMBT5401M3T5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MMBT5401M3T5G
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .13 W; Maximum Collector Current (IC): .06 A;
Datasheet MMBT5401M3T5G Datasheet
In Stock67,350
NAME DESCRIPTION
Nominal Transition Frequency (fT): 180 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .06 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .13 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 20
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 150 V
Maximum Collector-Base Capacitance: 6 pF
Peak Reflow Temperature (C): 260
Maximum VCEsat: .6 V
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