MMBT5401WT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MMBT5401WT1G
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .5 A;
Datasheet	MMBT5401WT1G Datasheet
In Stock	64,369

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	MMBT5401WT1GOSDKR MMBT5401WT1GOSTR 2156-MMBT5401WT1G-OS 2832-MMBT5401WT1G MMBT5401WT1GOSCT ONSONSMMBT5401WT1G MMBT5401WT1G-ND
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	150 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
64,369	-	-

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