Onsemi - MMBT6427LT1G

MMBT6427LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MMBT6427LT1G
Description NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;
Datasheet MMBT6427LT1G Datasheet
In Stock158,927
NAME DESCRIPTION
Nominal Transition Frequency (fT): 130 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: DARLINGTON
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 14000
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Peak Reflow Temperature (C): 260
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