MMBT6427LT3G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MMBT6427LT3G
Description	NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
Datasheet	MMBT6427LT3G Datasheet
In Stock	1,092

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Configuration:	DARLINGTON
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	14000
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Maximum Collector-Emitter Voltage:	40 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	7 pF
Maximum VCEsat:	1.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,092	-	-

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