MMBZH20VALT1G by Onsemi | Diodes

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Manufacturer	Onsemi
Manufacturer's Part Number	MMBZH20VALT1G
Description	ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	MMBZH20VALT1G Datasheet
In Stock	1,351

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Forward Voltage (VF):	.9 V
Working Test Current:	1 mA
Config:	COMMON ANODE, 2 ELEMENTS
Diode Type:	ZENER DIODE
Maximum Voltage Temperature Coefficient:	17.2 mV/Cel
Surface Mount:	YES
Maximum Reverse Current:	.05 uA
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	ZENER
JESD-30 Code:	R-PDSO-G3
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	175 Cel
Reverse Test Voltage:	17 V
Maximum Repetitive Peak Reverse Voltage:	17 V
JEDEC-95 Code:	TO-236
Minimum Operating Temperature:	-55 Cel
Maximum Voltage Tolerance:	5 %
Diode Element Material:	SILICON
Nominal Reference Voltage:	20 V
Maximum Power Dissipation:	.225 W
Reference Standard:	IEC-61000-4-2

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,351	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;