MMDJ3P03BJTR2 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MMDJ3P03BJTR2
Description	PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 3 A;
Datasheet	MMDJ3P03BJTR2 Datasheet
In Stock	2,318

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	110 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	90
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	8
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1.25 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	235
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,318	-	-

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