Onsemi - MMUN2111LT1

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MMUN2111LT1 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MMUN2111LT1
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 235;
Datasheet MMUN2111LT1 Datasheet
In Stock626
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 35
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT-IN BIAS RESISTOR RATIO 1
Peak Reflow Temperature (C): 235
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Pricing (USD)

Qty. Unit Price Ext. Price
626 $0.025 $15.650

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