MMUN2212LT3 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MMUN2212LT3
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
Datasheet	MMUN2212LT3 Datasheet
In Stock	2,153

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT IN BIAS RESISTOR RATIO IS 1
Peak Reflow Temperature (C):	235

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,153	-	-

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

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