Onsemi - MMUN2235LT1G

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MMUN2235LT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MMUN2235LT1G
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet MMUN2235LT1G Datasheet
In Stock21,767
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): .4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Moisture Sensitivity Level (MSL): 1
Other Names: MMUN2235LT1GOSDKR
MMUN2235LT1GOSTR
2156-MMUN2235LT1G
MMUN2235LT1GOSCT
MMUN2235LT1G-ND
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 80
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 21.36
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

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