Onsemi - MPSW63G

  1. Home
  2. Onsemi - MPSW63G
MPSW63G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MPSW63G
Description PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .5 A;
Datasheet MPSW63G Datasheet
In Stock2,499
NAME DESCRIPTION
Nominal Transition Frequency (fT): 125 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: DARLINGTON
Transistor Element Material: SILICON
JEDEC-95 Code: TO-92
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 10000
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,499 $0.076 $189.924

Popular Products

Category Top Products

MMBT2222A by Taitron Components

MMBT2222A

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 35;
ZTX653 by Diodes Incorporated

ZTX653

Diodes Incorporated

ZTX653 by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 2A, and transition frequency of 175MHz. It is used in applications requiring high-speed switching such as power supplies and amplifiers due to its silicon element material and single configuration design.
SBC846BDW1T1G by Onsemi

SBC846BDW1T1G

Onsemi

SBC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, min DC current gain of 200 (hFE), and operates up to 150°C. This small outline transistor features a max power dissipation of 0.38W in a rectangular package with Gull Wing terminals.
2N3904 by Allegro MicroSystems

2N3904

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547C by Motorola

BC547C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
FMMT493TA by Diodes Incorporated

FMMT493TA

Diodes Incorporated

FMMT493TA by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 1A, and min DC current gain of 20. With a package style of small outline and surface mount capability, it operates up to 150°C and has a transition frequency of 150MHz.
BC817-40 by Infineon Technologies

BC817-40

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT2907A by Bytesonic Electronics

MMBT2907A

Bytesonic Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
ULN2803AFWG(5,EL,M) by Toshiba

ULN2803AFWG(5,EL,M)

Toshiba

Toshiba's ULN2803AFWG(5,EL,M) is an NPN BJT with 8 Darlington banks. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications, this surface-mount transistor features built-in diodes and resistors in a small outline package.
BC857B,215 by Nexperia

BC857B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
MMBT3904,215 by Nexperia

MMBT3904,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-236AB;
BC817-40 by Diotec Semiconductor Ag

BC817-40

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;
2N3906 by Jiangsu Changjiang Electronics Technology

2N3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
JANTX2N2222AUB by Defense Logistics Agency

JANTX2N2222AUB

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Qualification: Qualified;
2N2905A by Swampscott Electronics

2N2905A

Swampscott Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC847-B by Samsung

BC847-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
SBC817-40LT3G by Good-ark Electronics

SBC817-40LT3G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
MMBT3904 by Bytesonic Electronics

MMBT3904

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
SBC856BLT1G by Onsemi

SBC856BLT1G

Onsemi

SBC856BLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 220, and VCE max of 65V. Ideal for small outline applications, it operates b/w -55 to 150°C and has a transition frequency of 100MHz.
MMBT3906 by Bytesonic Electronics

MMBT3906

Bytesonic Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;