Onsemi - MSD2714AT1G

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MSD2714AT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MSD2714AT1G
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector-Emitter Voltage: 25 V;
Datasheet MSD2714AT1G Datasheet
In Stock1,401
NAME DESCRIPTION
Nominal Transition Frequency (fT): 650 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: BIP RF Small Signal
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 90
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 25 V
Maximum Collector-Base Capacitance: .7 pF
Peak Reflow Temperature (C): 260
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