MTDF2N06HDR2 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MTDF2N06HDR2
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Minimum DS Breakdown Voltage: 60 V; JESD-609 Code: e0;
Datasheet	MTDF2N06HDR2 Datasheet
In Stock	331

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.5 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-G8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.22 ohm
Maximum Feedback Capacitance (Crss):	18 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	1.5 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
331	$0.206	$68.186

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