Onsemi - MUN5213DW1T3G

MUN5213DW1T3G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MUN5213DW1T3G
Description NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .256 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
Datasheet MUN5213DW1T3G Datasheet
In Stock868
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 6
Maximum Power Dissipation (Abs): .256 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
868 $0.031 $26.908

Popular Products

Category Top Products