Onsemi - MUN5336DW1T1G

  1. Home
  2. Onsemi - MUN5336DW1T1G
MUN5336DW1T1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MUN5336DW1T1G
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .385 W; Maximum Collector Current (IC): .1 A; Minimum Operating Temperature: -55 Cel;
Datasheet MUN5336DW1T1G Datasheet
In Stock1,658
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .385 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 80
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BAIS RESISTOR RATIO IS 1
Peak Reflow Temperature (C): 260
Maximum VCEsat: .25 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,658 $0.031 $51.398

Popular Products

Category Top Products

2N3906 by NXP Semiconductors

2N3906

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
BC817-25 by Surge Components

BC817-25

Surge Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
2N3906 by STMicroelectronics

2N3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2907A by Microsemi

MMBT2907A

Microsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
2N3906 by Semitronics

2N3906

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Loras Industries

2N3904

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847C by ROHM

BC847C

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222A by New Jersey Semiconductor Products

2N2222A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
2N2905A by SPC TECHNOLOGY/ MULTICOMP

2N2905A

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;
BC547B by Microchip Technology

BC547B

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
BCX19LT1G by Onsemi

BCX19LT1G

Onsemi

BCX19LT1G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 0.225W, and min DC current gain of 40. Ideal for small outline applications, it operates at up to 150°C with a max collector-emitter voltage of 45V. Suitable for surface mount designs requiring a compact rectangular package shape.
BC547-B by Infineon Technologies

BC547-B

Infineon Technologies

BC547-B by Infineon Technologies is a NPN BJT transistor with a min hFE of 200, ideal for switching applications. It has a max IC of 0.1A and can operate at temperatures up to 150°C. The transistor comes in a cylindrical package with through-hole terminals, making it suitable for various electronic circuits.
JANTX2N2222AUA/TR by Microchip Technology

JANTX2N2222AUA/TR

Microchip Technology

JANTX2N2222AUA/TR by Microchip is a NPN BJT transistor with hFE of 30, Vce of 50V, and Ic of 0.8A. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. It comes in a small outline package suitable for surface mount technology.
MMUN2211LT1G by Onsemi

MMUN2211LT1G

Onsemi

MMUN2211LT1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline transistor operates up to 150°C and comes in a rectangular package suitable for surface mount assembly.
MMBT2907A by Taitron Components

MMBT2907A

Taitron Components

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;
BC857C,215 by NXP Semiconductors

BC857C,215

NXP Semiconductors

BC857C,215 by NXP Semiconductors is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.65V and a min DC current gain (hFE) of 420. It is commonly used for switching applications due to its surface mount capability and max collector-emitter voltage of 45V.
ZTX651 by Zetex Plc

ZTX651

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
2N2222A by Vpt Components

2N2222A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;
BC847-C by Samsung

BC847-C

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
2N2222A by National Semiconductor

2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;