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Manufacturer | Onsemi |
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Manufacturer's Part Number | NDUL03N150CG |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 5 A; |
Datasheet | NDUL03N150CG Datasheet |
In Stock | 761 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 34 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 2.5 A |
Maximum Pulsed Drain Current (IDM): | 5 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 1500 V |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain-Source On Resistance: | 10.5 ohm |