Onsemi - NGB8245NT4G

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NGB8245NT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB8245NT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Threshold Voltage: 2.3 V; Maximum Rise Time (tr): 6000 ns;
Datasheet NGB8245NT4G Datasheet
In Stock672
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Rise Time (tr): 6000 ns
Maximum Gate-Emitter Threshold Voltage: 2.3 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 150 W
Maximum Collector-Emitter Voltage: 490 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 15 V
Maximum Fall Time (tf): 11000 ns
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