Onsemi - NGD18N40ACLBT4G

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NGD18N40ACLBT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGD18N40ACLBT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Threshold Voltage: 2.1 V;
Datasheet NGD18N40ACLBT4G Datasheet
In Stock2,449
NAME DESCRIPTION
Maximum Collector Current (IC): 15 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 2.1 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 115 W
Maximum Collector-Emitter Voltage: 430 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 18 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
2,449 $7.300 $17,877.700

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