Onsemi - NGD8201BNT4G

  1. Home
  2. Onsemi - NGD8201BNT4G
NGD8201BNT4G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NGD8201BNT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A; Maximum Rise Time (tr): 7000 ns; Maximum Collector-Emitter Voltage: 430 V;
Datasheet NGD8201BNT4G Datasheet
In Stock1,797
NAME DESCRIPTION
Maximum Collector Current (IC): 15 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 1.8 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 115 W
Maximum Collector-Emitter Voltage: 430 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 18 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,797 - -

Popular Products

Category Top Products

AFGHL50T65SQDC by Onsemi

AFGHL50T65SQDC

Onsemi

AFGHL50T65SQDC by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 100A, and Ptot of 238W. Ideal for power control applications due to its fast turn-off time (toff) of 160.8ns and high operating temperature range (-55 to 175°C).
IXXH75N60C3D1 by IXYS Corporation

IXXH75N60C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Package Body Material: PLASTIC/EPOXY;
F475R06W1E3BOMA1 by Infineon Technologies

F475R06W1E3BOMA1

Infineon Technologies

Infineon's F475R06W1E3BOMA1 IGBT features N-CHANNEL polarity, 600V max. collector-emitter voltage, and 100A max. collector current. Ideal for power control applications with a complex configuration, it offers fast turn-off time of 330ns and turn-on time of 45ns in a rectangular package with flange mount style.
APT65GP60JDQ2 by Advanced Power Technology

APT65GP60JDQ2

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
FF100R12RT4HOSA1 by Infineon Technologies

FF100R12RT4HOSA1

Infineon Technologies

FF100R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and turn off time of 490ns, suitable for POWER CONTROL applications. The transistor operates at up to 175°C and features a built-in diode in its RECTANGULAR package style.
IRG4BC30KDPBF by Infineon Technologies

IRG4BC30KDPBF

Infineon Technologies

IRG4BC30KDPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 28A max collector current. It has a 120ns fall time, 370ns turn off time, and can handle up to 100W power dissipation. Ideal for motor control applications due to its single configuration and flange mount package style.
FS150R12KT3 by Infineon Technologies

FS150R12KT3

Infineon Technologies

FS150R12KT3 by Infineon Technologies is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a VCEsat of 2.15V, IC of 200A, and Pmax of 700W. Ideal for high-power applications like motor drives and inverters due to its low on/off times and high collector-emitter voltage capability.
F3L75R12W1H3B27BOMA1 by Infineon Technologies

F3L75R12W1H3B27BOMA1

Infineon Technologies

Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
IGB30N60H3ATMA1 by Infineon Technologies

IGB30N60H3ATMA1

Infineon Technologies

IGB30N60H3ATMA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 262ns and turn-on time of 40ns, making it ideal for power control applications. This surface-mount transistor comes in a small outline package with GULL WING terminals.
FF1400R12IP4BOSA1 by Infineon Technologies

FF1400R12IP4BOSA1

Infineon Technologies

FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
FGD3040G2-F085 by Onsemi

FGD3040G2-F085

Onsemi

FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.
IRG4BC30UPBF by Infineon Technologies

IRG4BC30UPBF

Infineon Technologies

IRG4BC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. It has a toff of 320ns and tf of 150ns, ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
IRG4PC40UD-E by Infineon Technologies

IRG4PC40UD-E

Infineon Technologies

IRG4PC40UD-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 330ns and turn-on time of 92ns, this transistor is designed for flange mount installation.
AUIRGB4062D1 by Infineon Technologies

AUIRGB4062D1

Infineon Technologies

Infineon's AUIRGB4062D1 is an N-CHANNEL IGBT with tr of 41ns and tf of 40ns. It boasts a max power dissipation of 246W, ideal for high-power applications like motor drives and inverters. With a VCE of 600V and IC of 59A, it ensures efficient performance even at elevated temperatures up to 175°C.
FGA30T65SHD by Fairchild Semiconductor

FGA30T65SHD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
IRG4PC30FPBF by International Rectifier

IRG4PC30FPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
IKW75N65EH5XKSA1 by Infineon Technologies

IKW75N65EH5XKSA1

Infineon Technologies

IKW75N65EH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 90A, ideal for POWER CONTROL applications. It has a package style of FLANGE MOUNT, operating temperature range from -40 to 175 °C, and a turn-off time of 215ns.
IXXH30N60B3D1 by IXYS Corporation

IXXH30N60B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
HGTG11N120CND by Harris Semiconductor

HGTG11N120CND

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 11 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
FF300R12ME4BOSA1 by Infineon Technologies

FF300R12ME4BOSA1

Infineon Technologies

FF300R12ME4BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 450A, and turn off time of 720ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.