Onsemi - NGD8201BNT4G

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NGD8201BNT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGD8201BNT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A; Maximum Rise Time (tr): 7000 ns; Maximum Collector-Emitter Voltage: 430 V;
Datasheet NGD8201BNT4G Datasheet
In Stock1,797
NAME DESCRIPTION
Maximum Collector Current (IC): 15 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 1.8 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 115 W
Maximum Collector-Emitter Voltage: 430 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 18 V
Peak Reflow Temperature (C): 260
Maximum Fall Time (tf): 15000 ns
Moisture Sensitivity Level (MSL): 1
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