Onsemi - NGD8209NT4G

  1. Home
  2. Onsemi - NGD8209NT4G
NGD8209NT4G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NGD8209NT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 12 A; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): 260;
Datasheet NGD8209NT4G Datasheet
In Stock871
NAME DESCRIPTION
Maximum Collector Current (IC): 12 A
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Gate-Emitter Threshold Voltage: 2 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 94 W
Maximum Collector-Emitter Voltage: 445 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 15 V
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
871 - -

Popular Products

Category Top Products

IRG4BC40UPBF by International Rectifier

IRG4BC40UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; No. of Elements: 1;
2ED300C17SROHSBPSA1 by Infineon Technologies

2ED300C17SROHSBPSA1

Infineon Technologies

N-Channel; Transistor Element Material: SILICON; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Moisture Sensitivity Level (MSL): 1;
APT200GN60JDQ4 by Microsemi

APT200GN60JDQ4

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 283 A; Maximum Collector-Emitter Voltage: 600 V;
IGP15N60TXKSA1 by Infineon Technologies

IGP15N60TXKSA1

Infineon Technologies

Infineon's IGP15N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 30A max collector current. It has a turn-off time of 291ns and turn-on time of 32ns, making it ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals and can operate at temperatures up to 175°C.
APT35GT120JU2 by Microchip Technology

APT35GT120JU2

Microchip Technology

Microchip Technology's APT35GT120JU2 is an N-CHANNEL IGBT with 1200V VCEsat, 55A IC, and 260W power dissipation. Ideal for power control applications due to its fast turn-off time of 610ns and built-in diode configuration. Operates at up to 150°C temperature, making it suitable for high-power systems.
IRGR2B60KDPBF by International Rectifier

IRGR2B60KDPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
CM200DU-12NFH by Powerex

CM200DU-12NFH

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
CM200DU-12NFH by Mitsubishi Electric

CM200DU-12NFH

Mitsubishi Electric

Mitsubishi Electric's CM200DU-12NFH is a N-CHANNEL IGBT with 2 elements, 7 terminals, and max VCEsat of 2.7V. Ideal for power control applications, it has a max collector current of 200A, operating temp of 150°C, and peak reflow temp of 260°C.
IKD06N60RATMA1 by Infineon Technologies

IKD06N60RATMA1

Infineon Technologies

IKD06N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a built-in diode, 335ns turn-off time, and 22ns turn-on time. Ideal for power control applications due to its 100W max power dissipation and small outline package style.
FF450R12IE4BOSA2 by Infineon Technologies

FF450R12IE4BOSA2

Infineon Technologies

FF450R12IE4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and operates at up to 175°C. Ideal for POWER CONTROL applications, it features a turn off time of 900ns and a turn on time of 360ns.
STGW19NC60HD by STMicroelectronics

STGW19NC60HD

STMicroelectronics

STGW19NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 42A IC, and 140W Ptot. It's used for power control applications due to its fast turn-off time of 272ns and built-in diode in a rectangular package with through-hole terminals.
NGTB03N60R2DT4G by Onsemi

NGTB03N60R2DT4G

Onsemi

NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
ISL9V2040D3ST by Fairchild Semiconductor

ISL9V2040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
FF450R12KT4PHOSA1 by Infineon Technologies

FF450R12KT4PHOSA1

Infineon Technologies

FF450R12KT4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. The transistor operates at temperatures as low as -40°C and comes in a RECTANGULAR package style with 7 terminals.
FGH40N65UFDTU-F085 by Onsemi

FGH40N65UFDTU-F085

Onsemi

FGH40N65UFDTU-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature up to 150°C, and a turn-off time (toff) of 152ns. This RECTANGULAR package transistor features a built-in diode and matte tin finish for efficient performance in various power control systems.
IRGB4056DPBF by Infineon Technologies

IRGB4056DPBF

Infineon Technologies

IRGB4056DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 24A. It has a Power Dissipation of 140W, making it suitable for POWER CONTROL applications requiring fast switching times (tr: 24ns, tf: 31ns) and high efficiency in a RECTANGULAR package.
AUIRG4BC30USTRL by International Rectifier

AUIRG4BC30USTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; JESD-609 Code: e3;
BSM150GT120DN2 by Infineon Technologies

BSM150GT120DN2

Infineon Technologies

Infineon's BSM150GT120DN2 IGBT offers 1200V VCE, 200A IC, and 1250W power dissipation. Ideal for high-power applications requiring low VCEsat of 3V. Operates up to 150°C making it suitable for industrial and automotive sectors.
MIXA60W1200TED by Littelfuse

MIXA60W1200TED

Littelfuse

MIXA60W1200TED by Littelfuse is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle up to 85A collector current. Ideal for power control applications, it operates at temperatures up to 150°C with a collector-emitter voltage of 1200V.
IRG4PF50WPBF by Infineon Technologies

IRG4PF50WPBF

Infineon Technologies

IRG4PF50WPBF by Infineon Technologies is an N-CHANNEL IGBT with 900V max collector-emitter voltage, 51A max collector current, and 200W max power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 370ns and low gate-emitter threshold voltage of 6V.