Onsemi - NGP15N41ACLG

  1. Home
  2. Onsemi - NGP15N41ACLG
NGP15N41ACLG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NGP15N41ACLG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Maximum Collector Current (IC): 15 A; Maximum Gate-Emitter Voltage: 15 V; Maximum Fall Time (tf): 15000 ns;
Datasheet NGP15N41ACLG Datasheet
In Stock1,030
NAME DESCRIPTION
Maximum Collector Current (IC): 15 A
Maximum Power Dissipation (Abs): 107 W
Maximum Collector-Emitter Voltage: 440 V
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 1.9 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 15 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 15000 ns
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,030 - -

Popular Products

Category Top Products

HGT1S10N120BNST by Onsemi

HGT1S10N120BNST

Onsemi

HGT1S10N120BNST by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. It is designed for motor control applications, featuring a rise time of 15ns and a power dissipation of 298W. This single configuration transistor operates b/w -55 to 150 °C and has a gate-emitter voltage of up to 20V.
FF450R12ME4PB11BOSA1 by Infineon Technologies

FF450R12ME4PB11BOSA1

Infineon Technologies

FF450R12ME4PB11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, max current of 675A, and turn-off time of 740ns. Ideal for applications requiring high power switching in industrial settings due to its robust design and fast switching capabilities.
FGL60N100BNTD by Onsemi

FGL60N100BNTD

Onsemi

FGL60N100BNTD by Onsemi is an N-CHANNEL IGBT with 1000V VCE, 60A IC, and 460ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
FGH40N65UFDTU-F085 by Onsemi

FGH40N65UFDTU-F085

Onsemi

FGH40N65UFDTU-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature up to 150°C, and a turn-off time (toff) of 152ns. This RECTANGULAR package transistor features a built-in diode and matte tin finish for efficient performance in various power control systems.
FF600R12ME4B11BPSA2 by Infineon Technologies

FF600R12ME4B11BPSA2

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FS75R12KS4BOSA1 by Infineon Technologies

FS75R12KS4BOSA1

Infineon Technologies

Infineon FS75R12KS4BOSA1 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. Features include 1200V max collector-emitter voltage, 100A max collector current, and 390ns turn off time. Ideal for high-power applications requiring fast switching such as motor drives and inverters.
APT80GP60B2G by Microsemi

APT80GP60B2G

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Package Style (Meter): IN-LINE; Maximum Operating Temperature: 150 Cel;
F3L300R12ME4B23BOSA1 by Infineon Technologies

F3L300R12ME4B23BOSA1

Infineon Technologies

F3L300R12ME4B23BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 450A. This IGBT is designed for power control applications with UL approval.
IRG7PH42UD2PBF by International Rectifier

IRG7PH42UD2PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel;
IRG4PC50F-EPBF by International Rectifier

IRG4PC50F-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; No. of Terminals: 3;
IKZ75N65EL5XKSA1 by Infineon Technologies

IKZ75N65EL5XKSA1

Infineon Technologies

IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
IRG4PH20KPBF by Infineon Technologies

IRG4PH20KPBF

Infineon Technologies

IRG4PH20KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 24W. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 720ns and Max Fall Time of 400ns. Ideal for high-power systems requiring efficient switching capabilities.
HGTD1N120BNS9A by Fairchild Semiconductor

HGTD1N120BNS9A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Maximum Gate-Emitter Voltage: 20 V;
STGB30M65DF2 by STMicroelectronics

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
FS50R06W1E3BOMA1 by Infineon Technologies

FS50R06W1E3BOMA1

Infineon Technologies

Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
IRG4BC30U-SPBF by International Rectifier

IRG4BC30U-SPBF

International Rectifier

IRG4BC30U-SPBF by International Rectifier is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 23A max collector current. It has a power dissipation of 100W, turn-off time of 320ns, and operates at up to 150°C. Ideal for power control applications requiring fast switching speeds in surface-mount configurations.
IRG4BC40SPBF by Infineon Technologies

IRG4BC40SPBF

Infineon Technologies

IRG4BC40SPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 60A max collector current. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 1940ns and turn-on time of 44ns, it offers efficient performance in high-power systems.
FGH80N60FD2TU by Onsemi

FGH80N60FD2TU

Onsemi

FGH80N60FD2TU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 290W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and offers fast switching times of 74ns turn on and 100ns fall time.
AUIRGP4066D1-E by International Rectifier

AUIRGP4066D1-E

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Transistor Application: POWER CONTROL;
FPF2G120BF07ASP by Fairchild Semiconductor

FPF2G120BF07ASP

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON;