Onsemi - NGTB15N120FLWG

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NGTB15N120FLWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB15N120FLWG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Finish: TIN;
Datasheet NGTB15N120FLWG Datasheet
In Stock151
NAME DESCRIPTION
Other Names: NGTB15N120FLWG-ND
2156-NGTB15N120FLWG
488-NGTB15N120FLWG
NGTB15N120FLWGOS
Maximum Collector Current (IC): 30 A
Maximum Power Dissipation (Abs): 156 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
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