Onsemi - NGTB30N65IHL2WG

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NGTB30N65IHL2WG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB30N65IHL2WG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; JESD-609 Code: e3;
Datasheet NGTB30N65IHL2WG Datasheet
In Stock1,260
NAME DESCRIPTION
Other Names: ONSONSNGTB30N65IHL2WG
2156-NGTB30N65IHL2WG-OS
Maximum Collector Current (IC): 60 A
Maximum Power Dissipation (Abs): 300 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
1,260 $3.310 $4,170.600

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