Onsemi - NGTG15N120FL2WG

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NGTG15N120FL2WG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTG15N120FL2WG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 294 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Finish: Matte Tin (Sn) - annealed;
Datasheet NGTG15N120FL2WG Datasheet
In Stock1,912
NAME DESCRIPTION
Maximum Collector Current (IC): 20 A
Maximum Power Dissipation (Abs): 294 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
1,912 $1.750 $3,346.000

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